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| UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all range of hFE 1 TO-220 1: Base 2: Collector 3: Emitter *Pb-free plating product number: 2SC5305L ABSOLUTE MAXIMUM RATINGS (TC=25, unless otherwise noted.) PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current (Pulse)* Base Current (DC) Base Current (Pulse)* Power Dissipation (TC=25) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICP IB IBP PC Tj Tstg RATINGS 800 400 12 5 10 2 4 75 150 -65 ~ 150 UNIT V V V A A A A W THERMAL CHARACTERISTICS (TC=25, unless otherwise noted.) PARAMETER Thermal Resistance Junction to Case Junction to Ambient SYMBOL RJC RJA RATINGS 1.65 62.5 UNIT /W UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R203-028,A www.unisonic.com.tw UTC 2SC5305 ELECTRICAL CHARACTERISTICS (TC=25, unless otherwise noted.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current NPN EPITAXIAL SILICON TRANSISTOR TEST CONDITIONS IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE=1mA, IC=0 VCB=500V, IE=0 VEB = 9V, IC = 0 VCE=1V, IC=0.8A DC Current Gain VCE=1V,IC=2A IC=0.8A, IB=0.08A Collector-Emitter Saturation Voltage VCE (sat) IC=2A, IB=0.4A IC=0.8A, IB=0.08A Base-Emitter Saturation Voltage VBE (sat) IC=2A, IB=0.4A Output Capacitance Cob VCB = 10V, f=1MHz Turn ON Time tON VCC=300V, IC =2A IB1 = 0.4A, IB2=-1A Storage Time tSTG RL = 150 Fall Time tF VCC=15V,VZ=300V Storage Time tSTG IC = 2A,IB1 = 0.4A Fall Time tF IB2 = -0.4A, LC=200H IF = 1A Diode Forward Voltage VF IF = 2A IF = 0.4A Reverse recovery time* trr IF = 1A (di/dt =10A/s) IF = 2A *Pulse Test : Pulse Width=5mS, Duty cycles10% SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 MIN 800 400 12 TYP MAX 10 10 22 8 0.4 0.5 1.0 1.0 75 150 2 0.2 2.25 150 1.5 1.6 800 1.4 1.9 UNIT V V V A A V V pF ns s s s ns V ns s s Static Characteristic 5 DC current Gain 100 COLLECTOR CURRENT, I C (A) 3 IB = 100mA DC CURRENT GAIN, h 4 IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA Ta = 125 FE VCE = 1V 25 -25 10 2 1 0 0 1 2 3 4 5 6 7 8 IB = 50mA IB = 0 9 CE 10 1 0.01 0.1 1 10 COLLECTOR-EMITTER VOLTAGE, V (V) COLLECTOR CURRENT, I C (A) UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R203-028,A www.unisonic.com.tw UTC 2SC5305 DC current Gain 100 NPN EPITAXIAL SILICON TRANSISTOR Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10 BE(sat), Ta = 125 hFE, DC CURRENT GAIN 25 -20 10 VCE = 5V IC = 10 IB SATURATION VOLTAGE, V V CE(sat) (V) 1 VBE(sat) VCE(sat) 0.1 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 COLLECTOR CURRENT, I C (A) COLLECTOR CURRENT, I C (A) Collector-Emitter Saturation Voltage SATURATION VOLTAGE, VCE(sat) (V) SATURATION VOLTAGE, VBE(sat) (V) 100 Base-Emitter Saturation Voltage 10 IC = 5IB 25 IC = 5IB 1 Ta = 125 0.1 1 -20 25 Ta = 125 -20 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 COLLECTOR CURRENT, IC (A) COLLECTOR CURRENT, IC (A) Switching Time 10 Collector Output Capacitance 1000 VCC = 300V IC = 5IB1 = -2.5IB2 tSTG CAPACITANCE, Cob (pF) f = 1MHz (S) 1 100 STG, t F TIME, t 0.1 tF 10 0.01 0.1 1 10 1 1 10 100 COLLECTOR CURRENT, I C (A) COLLECTOR-BASE VOLTAGE, V CB (V) UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R203-028,A www.unisonic.com.tw UTC 2SC5305 Reverse Recovery Time REVERSE RECOVERY TIME, trr (S) 1.6 NPN EPITAXIAL SILICON TRANSISTOR Forward Diode Voltage F 1.4 FORWARD DIODE VOLTAGE, V (V) 1.0 10 1.2 1 1.0 0.8 1.5 2.0 0.1 0.01 0.1 1 10 FORWARD CURRENT, IF(A) FORWARD DIODE CURRENT, I F (A) Safe Operating Area 100 100 Power Derating (W) 1s COLLECTOR CURRENT, I C (A) 10s 1 POWER DISSIPATION, P 10 80 60 DC 5ms 1ms C 40 0.1 20 0.01 10 100 CE 0 1000 0 25 50 75 100 125 C 150 175 COLLECTOR-EMITTER VOLTAGE, V (V) CASE TEMPERATURE, T () UTC assum es no responsibility for equipm ent failures that result from using products at v alues that exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R203-028,A www.unisonic.com.tw |
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